A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention. As a German team pointed out at ISSCC, GaN ...

GaN power transistors are becoming the gold standard for fast compact mains power switching – GaN HEMTs have no reverse recovery charge and can be designed with low on-resistance and low parasitic ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel ...

Newly developed world´s smallest GaN surface-mount package DFN 8x8 (8 x 8 mm x 1.25 mm, with a 43% footprint compared to our conventional TO-220 package products) optimized for GaN power transistors ...

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...

Advanced Micro Devices has created new high-performance transistors in its labs based on the simple concept that sometimes two are better than one. The chipmaker said Tuesday it has manufactured in ...

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.